New EPC2039 eGaN® FET offers superior performance, big power in an extremely small package at a very affordable price.
EL SEGUNDO, Calif. — August 2015 — Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN®) device. The EPC2039 is an extremely small, 1.82 mm2, 80 VDS, 6.8 A power transistor with a maximum RDS(on) of 22 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package.
The EPC2039 has many uses but is primarily designed for high frequency power conversion applications, such as synchronous rectification, Class-D audio, high voltage buck converters, wireless charging, and pulsed power (LiDAR) applications. Emerging LiDAR applications include driverless vehicles and augmented reality.
Steve Colino, Vice President Global Sales and Marketing, points out that, “Where high power density at a low cost is needed, this is the leading edge transistor to be considered. It enables designers to increase the output power of their designs without increasing the space needed to do it.”
Price and Availability
Pricing for the EPC2039 power transistors at 1K units is $0.78 each and is available for immediate delivery from Digi-Key.
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]