Recognized as an EDN Magazine Hot 100 Product for 2015, EPC2035/36 low-priced gallium nitride FETs give better performance, smaller size, and lower cost than an equivalent silicon solution. This is the third time in 5 years that EPC’s eGaN technology has been recognized as a HOT 100.
EL SEGUNDO, Calif. — December 2015 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces that its EPC2035 (60 V) and EPC2036 (100 V) high frequency, low-priced eGaN FETs have been recognized with inclusion in the EDN list of 100 Hot Products for 2015.
“We are very excited that EDN, an industry-leading magazine, has recognized our innovative high performance, low-priced eGaN FETs as one of their Hot Products for 2015. These gallium nitride transistor products are competitively priced with silicon solutions, but with performance that enables applications that were previously beyond the capability of silicon MOSFETs. This is the first time in 60 years that there has been a non-silicon technology that has both superior performance and price compared with their silicon-based counterpart. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve,” said Alex Lidow, EPC’s co-founder and CEO.
GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage. GaN’s growth is coming from both the replacement of existing silicon devices, as well as from entirely new applications that are enabled by its superior performance. This second group of applications includes 5G wireless communications, wireless power, virtual reality glasses, autonomous vehicles and advanced medical technology, such as wireless heart pumps – to name a few.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]