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Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

Categories: Press Releases
Development Boards with 200 V eGaN FETs from Efficient Power Conversion (EPC) Enable High Efficiency up to 30 MHz

EPC’s new development boards enable power systems designers to easily and quickly evaluate the high efficiency achieved with 200 V gallium nitride transistors in class-E amplifiers, current-mode class-D, and push-pull converters operating up to 30 MHz.

EL SEGUNDO, Calif.— January 2016 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces high efficiency, GaN-based differential mode development boards that can operate up to 30 MHz.

These development boards are designed for class-E applications, such as wireless charging, but can be used for any application where a low-side switch is utilized. Examples include, but are not limited to, push-pull converters, current-mode class-D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

These development boards feature 200 V rated eGaN® FETs. The amplifiers are set to operate in differential mode and can be re-configured to operate in single-ended mode and include the gate driver and logic supply regulator.

All three boards have common preference specifications. The operating load conditions, including configuration, determine the optimal design load voltage and resistance. The device parameters for each board are given in the following table:

Demonstration Board
Part Number
Featured eGaN® FET
Part Number
Pulsed ID
EPC9052 EPC2012C 200 V 100 mOhm 85 pF 22 A
EPC9053 EPC2019 200 V 50 mOhm 150 pF 42 A
EPC9054 EPC2010C 200 V 25 mOhm 320 pF 90 A

Quick Start Guides, containing set-up procedures, circuit diagram, performance curves, bill of material and Gerber files for the boards are provided on-line at

Price and Availability

The EPC9052/9053/9054 are priced at $158.13 each and are available for immediate delivery from Digi-Key at

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]