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Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

Categories: Press Releases
Efficient Power Conversion (EPC) Announces Development Board with 50 A, 1 MHz Capability to Reduce Size in Point-of-Load Applications

EPC9059 development board showcases industry’s first monolithic half-bridge enhancement-mode gallium nitride (eGaN®) integrated circuits for high current, high frequency point-of-load applications for increased power density.

EL SEGUNDO, Calif.— January 2016 — Efficient Power Conversion Corporation (EPC) introduces the EPC9059 half-bridge development board for high current, high frequency point-of-load (POL) applications using eGaN ICs to reduce power conversion size. The EPC9059 development board has a 30 V maximum device voltage with a 50 A maximum output current. In this application two 30 V EPC2100 eGaN IC’s operating in parallel with a single onboard gate driver to achieve higher output currents. GaN devices have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation.

The total system efficiency of this board operating with 12 V input to 1 V output with a switching frequency of 1 MHz peaks near 90%. It runs with natural convection and no heatsink up to 32 A, and at heavy load condition of 40 A showed a 2.5% efficiency advantage over silicon based DrMOS solutions, which translates to an almost 20% reduction in total system power loss.

This board demonstrates how eGaN technology enables smaller size, higher efficiency, and higher power density at the higher frequencies and higher currents required in next generation point-of-load converters.

Price and Availability

EPC9059 development boards are priced at $137.75 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]