EPC Phase Seven Reliability Report shows that eGaN® FETs have solid reliability and are dependable replacement solutions to traditional silicon devices.
EL SEGUNDO, Calif.— March 2016 — EPC announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress. The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports a composite 0.24 FIT rate for products in the field, which is consistent with all of EPC’s in situ evaluations to date and validates the readiness of eGaN FETs to supplant their aging silicon cousins for commercial power switching applications.
According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration of the reliability of new technology is a major challenge and one that EPC takes very seriously. The results of this study show that EPC gallium nitride products have the requisite reliability to displace silicon as the technology of choice for semiconductors.”
For this report, EPC’s eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. eGaN FETs were stressed to meet the latest JEDEC standards, when possible. The tests included:
- High Temperature Reverse Bias (HTRB)
- High Temperature Gate Bias (HTGB)
- Temperature Cycling (TC)
- High Temperature High Humidity Bias (H3TRB)
- Early Life Failure Rate (ELFR) HTRB
- Intermittent Operating Life (IOL)
EPC’s extensive reliability testing continues to show that the devices are both intrinsically and environmentally reliable. All seven phases of the reliability test program are available at epc-co.com.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.