Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology

Categories: Press Releases
15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology

EPC’s new development boards can be configured as either a buck converter or a ZVS class-D amplifier, demonstrating reduced losses at high frequency using an eGaN FET synchronous bootstrap augmented gate drive.

EL SEGUNDO, Calif.— March 2016 — Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, enabling the designers to get their products into volume production quickly. All three boards feature a zero reverse recovery (QRR) synchronous bootstrap rectifier augmented gate driver to increase efficiency at high frequency operation, up to 15 MHz. The boards can produce a maximum output of 2.7 A in the buck and ZVS class-D amplifier configurations. Loss reduction is realized across the entire current range.

The EPC9066/67/68 feature 40 V, 65 V, and 100 V-rated eGaN FETs respectively. These boards are 2” x 1.5” and are laid out in a half-bridge configuration. Each board uses the Texas Instruments LM5113 gate driver with supply and bypass capacitors. The gate driver has been configured with a synchronous FET bootstrap circuit featuring the 100 V, 2800 mΩ EPC2038 eGaN FET, which eliminates the driver losses induced by the reverse recovery of the internal bootstrap diode. The boards have various probe points and Kelvin measurement points for DC input and output. In addition, the boards provide the capability to install a heat sink for high power operation.

The operating load conditions, including configuration, of the development board determine the optimal design load voltage and resistance, resulting in a specific board’s performance. The device parameters for each board are given in the following table:

Demonstration Board
Part Number
Featured eGaN® FET
Part Number
VDS (max)
RDS(on) (max)
Bootstrap FET
VDS (max) RDS(on) (max)
EPC9066 EPC8004 40 V 110 mΩ 100 V 2800 mΩ
EPC9067 EPC8009 65 V 130 mΩ 100 V 2800 mΩ
EPC9068 EPC8010 100 V 160 mΩ 100 V 2800 mΩ

Quick Start Guides, containing set-up procedures, circuit diagram, bill of material and Gerber files for the boards are provided on-line at

Price and Availability

The EPC9066/9067/9068 are priced at $158.13 each and are available for immediate delivery from Digi-Key at

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]