With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN^® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs.

Bodo’s Power Systems
David Reusch, Ph.D. and Alex Lidow, Ph.D.
June 1, 2016
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