The first three installments in this series covered field reliability experience and stress test qualification of EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs) and integrated circuits (ICs). Excellent field reliability that was documented is the result of applying stress tests covering the intended operating conditions the devices will experience within applications. Of equal importance is understanding the underlying physics of how eGaN devices will fail when stressed beyond intended operating conditions (e.g. datasheet parameters and safe operating area). This installment will take a deeper dive into the physics of failure centered around thermo-mechanical reliability of eGaN wafer level chip-scale packages (WLCSP).

Planet Analog
Chris Jakubiec
September 7, 2016
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