The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected lifetime.

Planet Analog
Chris Jakubiec
November 29, 2016
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