GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”
EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.
This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
Gallium nitride (GaN) is leading edge technology that is displacing the venerable silicon MOSFET in power conversion applications. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly increase efficiency, and reduce size, weight, and cost.
This timely third edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements and emerging applications. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and a wide range of applications. Included are
According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications.”
GaN Transistors for Efficient Power Conversion is published by John Wiley and Sons and is available for immediate purchase at Amazon (amazon.com).
About the Authors
Collectively, the authors have over ninety-years of experience working in power transistor design and applications. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They a