High Efficiency, High Density 1 kW LLC Resonant Converter in a 1/8th Brick Size using eGaN FETs Posted Monday, September 20, 2021 Categories: Articles With the continuous and fast-paced growth of data processing infrastructures, higher power levels that can be delivered in smallest areas are demanded. Power Systems Design September, 2021 Read article Tags: eGaN FETs Gallium Nitride Design Data Center GaN 48 V DC-DC LLC converter Related articles EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices How To GaN: Paralleling High Speed eGaN FETS for High Current Applications Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers EPC8000 Family Highlighted as “Green Product of the Month” in Bodo’s Power Systems