Exploring the Frontiers of GaN Power Devices Posted Thursday, September 23, 2021 Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications. Electronics Weekly September, 2021 Read article Related articles EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications Efficient Power Conversion Corporation (EPC) Receives 2017 Top 10 Power Products Award from Electronic Products China Magazine/21iC Media What is GaN? Revenge Fuels Energy Fight