Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.
EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
The device has a figure of merit (RDS(on) x QG) that is 20 times superior to alternative rad hard silicon solutions and the size is 20 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Finally, GaN devices support higher total radiation level and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of the EPC7019 include power supplies for satellites and mission equipment and motor drives for robotics and instrumentation.
“EPC’s GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before” said Alex Lidow, CEO, and co-founder of EPC. “The EPC7019 offers designers a solution with a figure of merit that is 20 times better than best-in-class silicon rad hard devices. This is the lowest on-resistance for a rad hard transistor on the market today. And, the EPC7019 is significantly smaller and lower cost”.
The EPC7019 is available for engineering sampling and will be fully qualified for volume shipments in October, 2022.
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Press contact: Efficient Power Conversion: Renee Yawger tel: 908.619.9678 email: [email protected]