GaN technology drives power density in data centers Posted Saturday, March 26, 2022 As servers move to 48V, GaN transistors will beat today's silicon MOSFETs, leading to better performance and cost. Data Center Dynamics March, 2022 Read article Related articles EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices Freebird Semiconductor Partners with EPC for Development of Radiation Hardened Gallium Nitride Power Conversion Systems for Satellite and Harsh Environment Applications How Enhancement Mode Gallium Nitride Transistors (eGAN FETs) Work - APEC 2012 Video: GaN for Wireless Power