Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 A_Pulsed, rad-hard GaN FET in a small 13.9 mm² footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.

Applications benefiting from the performance and fast deployment of the EPC7018 include DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.

“The EPC7018 offers designers a high power, ultra-low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”, said Alex Lidow, CEO, and co-founder of EPC

Availability

The EPC7018 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.

About EPC

EPC is the leader in enhancement mode gallium nitride (eGaN^®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.

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