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eGaN FET-Silicon Power Shoot-Out Part 12: Optimizing Dead Time

Categories: Articles

Initial shoot-out articles showed that eGaN® FETs behave similarly to silicon devices and can be evaluated using the same performance metrics. Although eGaN FETs perform significantly better by most metrics, the eGaN FET ‘body-diode’ forward voltage is higher than its MOSFET counterpart and can be a significant loss component during dead-time. Body diode forward conduction losses alone do not make up all dead-time dependent losses. Diode reverse-recovery and output capacitance losses are also important. In this article, we discuss dead-time management and the need to minimize all dead-time losses.

By Johan Strydom, Ph.D., Vice President of Applications, EPC Power Electronics Technology

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