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It has been three years since the commercialization of gallium nitride (GaN) devices as MOSFET replacements in a commercial DC-DC application. With the emergence of GaN devices, coupled with now attainable applications previously not achievable with MOSFET-based FETs, a favorable stage has been set for GaN-device developers to release emerging application potential largely unimagined and untapped.
EETimes Asia
May 16, 2013
http://www.eetasia.com/ART_8800684828_480200_TA_f13f883a.HTM