Written by industry experts, "GaN Transistors for Efficient Power Conversion" provides both theory and applications for gallium nitride transistors
EL SEGUNDO, Calif. - January 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
"This book will help designers to understand the exceptional benefits of GaN technology and the intricacies of working with GaN transistors in power conversion systems. It will set the stage for a new era in power electronics applications that surpass everything that came before it," noted Sam Davis, Editor-in-Chief, Power Electronics Technology magazine.
This practical guide provides guidance on the use of GaN transistors in widely used power electronics applications, ranging from buck converters to Power over Ethernet. Also included are discussions on fundamental power engineering subjects such as; performance characteristics of GaN transistors, layout considerations for GaN circuits, paralleling GaN transistors and driver IC requirements for GaN transistors. The final chapters address GaN device reliability, their exceptional radiation-resistant characteristics as well as their future in power electronics.
According to Alex Lidow, Efficient Power Conversion CEO and co-author of this book, "Gallium nitride transistors provide a long-awaited displacement technology for MOSFETs, and much has been learned over the past several years about how to apply this new technology. In addition to increasing the efficiency of today’s power conversion systems, GaN transistors open up new applications such as RF envelope tracking and wireless power transmission that are much needed to keep pace with the ever-expanding communications industry and battery operated products. These new applications are enabled by the high frequency switching capability combined with the high voltage and high power capabilities of gallium nitride FETs."
"GaN Transistors for Efficient Power Conversion" is available for $39.95 and can be purchased from the EPC website (www.epc-co.com), Digi-Key (www.digikey.com) or Amazon (www.amazon.com).
About the Authors
The four authors, Alex Lidow, Michael DeRooij, Johan Strydom and Yanping Ma are working for EPC, the first company to introduce enhancement mode GaN transistors. Collectively the authors have over ninety years experience working in power transistor design and application. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology with Dr. Lidow concentrating on transistor process design, Drs. DeRooij and Strydom focusing on power transistor applications and Dr. Ma providing expertise on quality assurance and reliability.
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon FETs (trademarked as eGaN® FETs) as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]