EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.
EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.
The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated DC-DC power supplies, point-of-load converters, and class D audio amplifiers.
“With the introduction of the EPC2007 we continue to add to our industry-leading eGaN FET portfolio providing power design engineers the opportunity to increase efficiency and reduce size of their power conversion systems when compared with silicon-based MOSFETs,” noted Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2007 is priced at $1.31 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
An application note detailing the performance improvements of the EPC2007 eGaN FET can be found at https://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf
Table 1 – Summary of EPC2007 Specification Ratings
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]