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Efficient Power Conversion Corporation (EPC) Selected as Finalist in Prestigious 2011 EE Times ACE Awards Competition

Categories: Press Releases

EL SEGUNDO, Calif-March 15, 2011 — Efficient Power Conversion Corporation (EPC) has been named a finalist in the EE Times 2011 Annual Creativity in Electronics (ACE) Awards (http://www.eetimes-ace.com/finalists.php). These annual awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we live in.

EPC has been recognized as a finalist within the Energy Technology Award category. This new category recognizes companies that have made the most significant contribution through the introduction of new concepts and products that help conserve energy or create new energy sources.

EPC eGaN FETs have both lower conduction losses and are capable of much higher switching frequencies than power MOSFETs or IGBTs. These advantages of eGaN technology can be applied in power conversion circuits to significantly reduce the consumption of electricity and enable greater penetration of alternative energy generation. Highly efficient eGaN based DC-DC converters used in servers and routers enable significant energy savings in server farms. By utilizing the higher frequency capability of eGaN FETs, RF transmission power losses can be greatly reduced by employing envelope tracking in the DC-DC converter stage. eGaN technology also tilts the equation towards electric transportation by increasing vehicle range and lowering battery costs.

EPC products are distributed exclusively through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

Tags: Awards