EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.
"Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC's potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap", said William Zhang, Publisher of EDN China.
“We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.
Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.
Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.
Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation.
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN™) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Press contact: Joe Engle tel: 310.986.0350 email: [email protected]