Efficient Power Conversion - Enhancement-mode Gallium Nitride Transistor Posted Thursday, December 20, 2012 By: Sun Changhua www.digitimes.com.tw December 20, 2012 Read translated article Related articles The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices How To GaN: Paralleling High Speed eGaN FETS for High Current Applications Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers EPC8000 Family Highlighted as “Green Product of the Month” in Bodo’s Power Systems How Enhancement Mode Gallium Nitride Transistors (eGAN FETs) Work - APEC 2012