GaN – Crushing Silicon One Application at a Time Posted Wednesday, October 23, 2013 Enhancement mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. Power Pulse By: Alex Lidow October, 2013 Related articles Efficient Power Conversion (EPC) Introduces Complete A4WP Compliant High Efficiency Wireless Power Transfer Demonstration Kit Delivering 35 W and Operating at 6.78 MHz The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices How To GaN: Paralleling High Speed eGaN FETS for High Current Applications EPC's EPC9121 10 W Wireless Multi-mode Demonstration System Named “Top 10 Power Product – Breakthrough Technology” Highly Resonant Wireless Power Transfer System Teardown