How To GaN: eGaN® FETs for High Frequency Switching Posted Tuesday, December 17, 2013 In this installment a return to hard-switching converters is made, but with a push to higher frequencies – beyond the practical limits of silicon technology. EEWeb By: Alex Lidow December, 2013 Related articles The New Silicon: EPC’s CEO on Why Gallium Nitride Will Be the Future of Power Management Devices How To GaN: Paralleling High Speed eGaN FETS for High Current Applications Efficient Power Conversion (EPC) Launches New eGaN Power Transistors That Break Silicon’s Previously Unmatched Cost-Speed Barriers EPC8000 Family Highlighted as “Green Product of the Month” in Bodo’s Power Systems IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”