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Efficient Power Conversion (EPC) Introduces High Current Development Board Featuring Multiple Half-Bridges in Parallel

Categories: Press Releases

EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive.

EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without sacrificing efficiency.

The EPC9013 development board is 2” x 2” with eight EPC2001 eGaN FETs in conjunction with the Texas Instruments LM5113 gate driver. The development board can be operated as a Buck, Boost, or bidirectional, as well as a half bridge for motor drives and isolated converter applications. It’s parallel configuration is recommended for high current applications. The printed circuit board (PCB) layout is designed for optimal switching performance. There are various probe points to facilitate simple waveform measurement and easily evaluate the eGaN FETs.

This development board simplifies the evaluation process of the EPC2001 eGaN FET for high current operation by including all the critical components on a single board that can be simply connected into any existing converter.

A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is included with the EPC9013 demo board for reference and ease of use.

EPC9013 development boards are priced at $150 each and are available for immediate delivery from Digi-Key at http://bit.ly/EPC9013DK

Design Information and Support for eGaN FETs:

 

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]