Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors.

EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for more and faster access to information is showing no signs of slowing…and this is the challenge that motivated the writing of this practical engineering handbook – DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion.

The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN^®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.

By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
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