EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package.  In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz

EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum R_DS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm² footprint.

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific.

EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and capture new market opportunities.

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN^® power transistors.

EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency.

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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Claude Shannon started it all when he wrote “A Mathematical Theory of Communication” in 1948 in which he reduced the communication of information to 1s and 0s, essentially binary digits. That theory led to the ability to transmit data without error in the noise-filled environment of the real world. Shannon would have been 100 years old on April 30, 2016.

EDN Network
Steve Taranovich
April 16, 2016
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