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EPC Collaborates with MPS to Develop a 2 kW, 48 V/14 V, Regulated Output Voltage, DC-DC Reference Design Board with EPC latest GaN FETs for More Efficient, Smaller, Faster, Bidirectional Converters

EPC Collaborates with MPS to Develop a 2 kW, 48 V/14 V, Regulated Output Voltage, DC-DC Reference Design Board with EPC latest GaN FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9165 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— February 2022 — EPC announces the availability of the EPC9165, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 97 % peak efficiency in a small footprint. This solution is ideal for high-density and high-power 48V battery packs such as those required for eMobility and light mobility.

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Electrifying Power Hungry Loads

Electrifying Power Hungry Loads

This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

EPC has introduced a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers an ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

Bodo’s Power Systems
February, 2022
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2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

The EPC9170 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— January 2022 — EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN® IC plus EPC2302 eGaN® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

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Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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65 A ePower Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion

65 A ePower Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion

Efficient Power Conversion (EPC) introduces the ePower Chipset family that integrates 100 V GaN driver and FETs up to 65 A offering higher performance and smaller solution size for high power density applications including DC-DC conversion and motor drives.

EL SEGUNDO, Calif.— December 2021 — EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

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EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to achieve 6 kW. The board features eight EPC2218 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

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New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

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Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

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Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc step-down topologies for an ultra-thin 48 V to 20 V rated to 250 W. It examines the pros and cons of various non-isolated topologies and how the topology impacts the choice of the power transistors and magnetics, specifically the inductors, as these two components account for the bulk of the losses in a converter. The article also undertakes a detailed analysis of the challenges to design thin inductors for these applications, including examining the factors that drive inductor losses, inductor size, and the design tradeoffs, including the impact on EMI. For this work, an ultrathin multilevel converter topology was selected, built, and tested. The experimental results obtained from this converter were used to further refine the operating setting and component selections that resulted in a peak efficiency exceeding 98%.

Michael de Rooij, EPC
Quentin Laidebeur, Würth Elektronik

IEEE Power Electronics Magazine
September, 2021
(subscription required)
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EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings

EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings

These new generation eGaN® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight.

EL SEGUNDO, Calif.— June, 2021 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054

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EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition

EPC to Showcase High Power Density Solutions Using eGaN FETs and ICs in Volume Applications at APEC 2021 Virtual Conference + Exposition

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for high power density computing, automotive, eMobility, and robotics.

EL SEGUNDO, Calif.— June 2021 — The EPC team will be delivering multiple technical presentations, an educational tutorial, and an exhibitor webinar on gallium nitride (GaN) technology and applications at the upcoming Applied Power Electronics Conference (APEC) Virtual Conference + Exposition, June 14-17. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN® FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

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EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

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EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9137 is a two-phase 48 V – 12 V bidirectional converter that delivers 1.5 kW with 97% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9137, a 1.5 kW, two-phase 48 V – 12 V bidirectional converter that operates with 97 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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