EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive.

EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without sacrificing efficiency.

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimized or eliminated in an eGaN FET-based system.

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET

EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9004 development board to make it easier for users to start designing with EPC’s 200 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced the introduction of the EPC9002 development board to make it easier for users to get started designing with EPC’s 100V enhancement-mode GaN transistor products.

The EPC9002 development board is a 50 V maximum input voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC1001 100V GaN Power Transistor. The purpose of this development board is to simplify the evaluation process of the EPC1001 GaN power transistor by including all the critical components on a single board that can be easily connected into any existing converter. The EPC9002 development board is 2” x 1.5” and contains not only two EPC1001 GaN transistors in a half bridge configuration with gate drivers, but also an on board gate drive supply and all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.