Alex Lidow, EPC's CEO, is interviewed by Don Tuite, editor of Electronic Design, about EPC's new and novel applications for its eGaN FET.

Electronic Design
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EPC's David Reusch talks about enhancement mode GaN and the package-less package that helps reduce losses.

Electronic Products
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In a featured interview with EEWeb Pulse EPC’s CEO, Alex Lidow, discusses what steps need to be taken to help with wide adoption of GaN devices.

EEWeb Pulse
June, 2013

Author: By Alix Paultre, Editorial Director, PSD
Date: 3/12/2013

In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN^®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and class-D audio amplifiers with device performance many times greater than silicon power MOSFETs.

http://www.powersystemsdesign.com/paultre-on-power---power-gan?a=1&c=6282

Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), describes how their Enhancement Mode Gallium Nitride Transistors (eGAN FETs) work to bring tremendous size and performance advantages over silicon power MOSFETs.

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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