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Low-Cost GaN e-mode Transistors and Diodes

January 2, 2013

Within the power electronics industry, GaN technology is growing out of its niche. The first GaN transistors are winning a growing share of the power electronics market. By Steve Soffels, Denis Marcon, and Stefaan Decoutere, IMEC www.bodospower.com

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Enhancement Mode GaN Making Wireless Power Transmission More Efficient

January 2, 2013

In this article we show that enhancement mode GaN transistors enable significant efficiency improvements in resonant topologies and demonstrate a practical example of a wireless power transmission system operating in the 6.78 MHz range.

By Alex Lidow PhD, CEO; Michael deRooij PhD, Executive Director of Application Engineering; David Reusch PhD, Director of Application Engineering, EPC Bodo’s Power Systems (www.bodospower.com)

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GaN-on-Si Based FETs Foster New Applications

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications.

Ashok Bindra
How2Power Today
December, 2012

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Efficient Power Conversion Corporation (EPC) Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

Written by industry experts, “GaN Transistors for Efficient Power Conversion” provides both theory and applications for gallium nitride transistors

EL SEGUNDO, Calif. – November 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a Simplified Chinese edition of its gallium nitride transistor textbook, “GaN Transistors for Efficient Power Conversion”. This textbook provides power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide.

“It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

“It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, ‘an emerging company worthy of tracking,’” commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

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eGaN FET-Silicon Power Shoot-Out Part 11: Optimizing FET On-Resistance

So far in this series, significant efforts have been made to show the performance improvements that can be achieved with eGaN® FETs over silicon MOSFETS in both hard and soft switching applications. In every case, eGaN FETs showed improvement over MOSFETs. In this volume of the eGaN FET-Silicon power shoot-out series, the die size optimization process is discussed and an example application is used to show specific results.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Power Electronics Technology

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China

EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.

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eGaN FET Safe Operating Area

In this article, we show that high electron densities and very low temperature coefficients give the eGaN FET major advantages over the power MOSFET needed for today’s high performance applications. High electron density yields superior RDS(ON), while positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.

By Yanping Ma, Ph.D., Director of Quality, EPC
Bodo's Power Systems

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Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

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eGaN® FET-Silicon Power Shoot-Out Part 10: High Frequency Resonant Converters

The advantages provided by eGaN FETs in hard switching isolated and non-isolated applications have been addressed previously. Here, we demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, compared to what is achievable with existing power MOSFET devices.

By David Reusch, Ph.D., Director of Applications, EPC
Power Electronics Technology

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Efficient Power Conversion (EPC) Announces a WiTricity™ Demonstration System Featuring High Frequency Gallium Nitride (eGaN) FETs

Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer.

EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion Corporation (EPC) today announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN FETs from EPC are an ideal solution for these systems because of their ability to operate efficiently at high frequency, voltage, and power.

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Are GaN Transistors Ready for Prime Time?

Gallium Nitride transistors have been available since Eudyna and Nitronex first introduced depletion-mode RF transistors in about 2005. Since then many new companies have entered the field with both RF transistors (e.g. RFMD, Triquint, Cree, Freescale, Integra, HRL, M/A-COM, and others), and transistors designed to replace power MOSFETs in power conversion applications (e.g. Transphorm, International Rectifier, GaN Systems, microGaN, and Efficient Power Conversion). This article discusses if this ground swell of activity mean that GaN transistors are ready to replace power MOSFETs, and, if so, why?

By Alex Lidow, Ph.D., CEO, EPC
Power Pulse.Net

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eGaN® FET-Silicon Power Shoot-Out Part 9: Wireless Power

Wireless power applications are gaining popularity in many commodity products such as mobile phones chargers. Enhancement mode gallium nitride transistors offer an alternative to MOSFET technology as they can switch fast enough to be ideal for wireless power applications. This article focuses on experimental evaluation of an induction coil wireless energy system using eGaN FETs operating at 6.78 MHz designed to be suitable for multiple 5 W USB based charging loads.

By Johan Strydom, Ph.D., Vice President of Applications, EPC and Johan Strydom, Ph.D., Vice President of Applications, EPC
Power Electronics Technology

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Eighth Brick DC-DC Converter Using Efficient GaN Transistor

In this article, we show that using GaN Transistors such as Efficient Power Conversion’s eGaN® FETs can improve the efficiency of isolated eighth brick DC-DC converters. This type of power converters is used extensively in mainframes, servers and telecommunication systems, and is available in a variety of sizes, output power capability, and input and output voltage ranges. Its modularity, power density, reliability and versatility have simplified the isolated power supply market.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Bodo’s Power Systems

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Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

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Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering

Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—May 2012 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. David Reusch has joined the EPC engineering team as Director, Applications Engineering.

As a member of the EPC applications team, Dr. Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using gallium nitride transistors. His initial focus will be on their use in higher voltage DC-DC converters and resonant, soft-switching converters. Dr. Reusch’s research and experience in these applications will be shared with customers to accelerate their designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs.

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