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Design High-Performance Class-D Audio Amplifiers with GaN FETs

Design High-Performance Class-D Audio Amplifiers with GaN FETs

The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance.

EL SEGUNDO, Calif.— April, 2024 — EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC's 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design, delivering an impressive 700 W per channel into a 4 Ω load.

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Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Efficient Power Conversion (EPC) introduces EPC21701, an 80 V laser driver IC capable of 15 A pulsed current for time-of-flight (ToF) lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing. 

EL SEGUNDO, Calif.— January 2023 — EPC announces the introduction of the EPC21701, a laser driver that monolithically integrates an 80 V, 40 A FET with gate driver and 3.3 logic level input into a single chip for time-of-flight lidar systems used in robotics, surveillance systems, and vacuum cleaners. It is tailored to lidar systems for gesture recognition, time of flight (ToF) measurement, robotic vision, or industrial safety.

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The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

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Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN® FET

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EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

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EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors

EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high performance, low-cost BLDC motors as demonstrated in the EPC9146 demonstration board.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9146, a 400 W motor drive demonstration. The EPC9146 power board contains three independently controlled half bridge circuits, featuring the EPC2152 monolithic ePower™ Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 ARMS) maximum output current. The inverter board measures just 81 mm x 75 mm and achieve an efficiency of greater than 98.4% at 400 W output power.

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Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high power density, low-cost DC-DC conversion demonstrated in the EPC9151 power module.

EL SEGUNDO, Calif.— December, 2020 — EPC announces the availability of the EPC9151, a 300 W bidirectional DC-DC voltage regulator in the in the very small 16th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower™ Stage integrated circuit from EPC to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design.  Additional phases can be added to this scalable 2-phase design to further increase power.

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EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification.

EL SEGUNDO, Calif. — November 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET.  This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.

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eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

Two solutions for high power density DC-DC conversion using ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable highly efficient solutions for ultra-thin laptops, displays, high-end gaming systems and other physically thin consumer electronics.

EL SEGUNDO, Calif.— October, 2020 — EPC announces the availability of the EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.  The EPC9153 is a 250 W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5 mm.  The EPC9148 utilizes a multilevel topology enabling a maximum component height less than 4 mm, while maintaining a 98% peak efficiency.

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Efficient Power Conversion (EPC) Redefines Power Conversion with the Release of ePower Stage IC Family of Products

Efficient Power Conversion (EPC) Redefines Power Conversion with the Release of ePower Stage IC Family of Products

Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D audio.

EL SEGUNDO, Calif.— March 2020 — EPC announces the introduction of an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility.

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Time-of-Flight (ToF) Demonstration Board Drives Lasers with Currents up to 28 A with 1.2 Nanosecond Pulses Using Automotive Qualified eGaN Technology

Time-of-Flight (ToF) Demonstration Board Drives Lasers with Currents up to 28 A with 1.2 Nanosecond Pulses Using Automotive Qualified eGaN Technology

Ultra-fast transition eGaN® FETs from Efficient Power Conversion (EPC) on the EPC9144 drive high current pulses up to 28 A with pulse widths as low as 1.2 ns, enhancing the accuracy, precision, and processing speed of ToF and flash lidar systems.

EL SEGUNDO, Calif.— January, 2020 — EPC announces the availability of the EPC9144, a 15 V, 28 A high current pulsed laser diode driver demonstration board.

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Automotive Qualified eGaN FET, 15 V EPC2216 Helps Time-of-Flight Lidar Systems ‘See’ Better

Automotive Qualified eGaN FET, 15 V EPC2216 Helps Time-of-Flight Lidar Systems ‘See’ Better

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2216, 15 V gallium nitride transistor optimized for affordable, high performance lidar systems.

EL SEGUNDO, Calif.— October 2019 — EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.

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EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

EPC Launches 3rd Edition of Gallium Nitride (GaN) Textbook with Power Conversion Applications Focus

GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

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EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.

EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Superior characteristics of eGaN® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

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eGaN Technology is Coming to Cars

eGaN Technology is Coming to Cars

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.

EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and other harsh environments.  The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment. 

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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