Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry, where factors such as efficiency, power density, and smaller form factors are the main demands of the community. Silicon MOSFETs have reached their theoretical limits for power electronics, and with board space at a premium, power system designers need alternatives. Gallium nitride (GaN) is a high-electron-mobility transistor (HEMT) semiconductor that is adding real value in emerging applications.

EETimes
August, 2020
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Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry where factors such as efficiency, power density, and smaller form factors are the main demands of the community. The power electronics industry has seen the theoretical limit of silicon MOSFETs reached and now needs to move to a new element. Gallium Nitride or GaN is a highly mobile semiconductor electron semiconductor (HEMT) that is proving to be a real added value in meeting new applications.

Power Electronics News
March 25, 2020
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Alex Lidow is the CEO of Efficient Power Conversion, probably the most prominent advocate for gallium nitride, delivering the first GaN transistor in 2009. After a decade of selling products, DESIGN&ELEKTRONIK editor Ralf Higgelke met him to discuss some of the latest advances in that area.

DESIGN&ELEKTRONIK
February 20, 2020
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Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications.

EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference which will be held in Charleston, South Carolina on April 3rd.