Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.

Planet Analog
Read article

Alex Lidow, CEO of Efficient Power Conversion, talks to Leo Laporte about Gallium Nitride, and how it is being used to create the next generation of microchips and wirelessly power the world.

This Week in Technology
View video

Efficient Power Conversion (EPC) has dealt another blow to the silicon MOSFET power element with its Generation 5 (Gen5) process enhancements, bringing improved performance while decreasing the cost of off-the-shelf Gallium Nitride transistors and shrinking their die size and board footprint.

Alex Lidow, EPC’s CEO/co-founder, and his team have once again put their expertise to work in their efforts to provide designers these unique power solution choices for new markets that need performance beyond what silicon devices have been able to provide. The team’s technical capabilities and in-depth understanding, even into the quantum mechanics of the process, are enabling both better performance as well as shrinking the size and cost of their solutions

EDN
March 15, 2017
Read article

The $330 billion silicon chip industry is the foundation of everything electronic. But it’s slowing down as it reaches a new level of maturity that is prompting a bunch of mergers and acquisitions.

That’s why Alex Lidow, an industry pioneer and the chief proponent of an alternative material to silicon — gallium nitride (GaN) — feels like his time has come. His company, Efficient Power Conversion (EPC), is unveiling a new generation of eGaN chips that are half the size of previous chips and have significantly higher performance.

VentureBeat
March 15, 2017
Read article

The combination of lower on-resistance, faster switching speeds, lower thermal impedance, and smaller physical size of eGaN FETs continues to raise the bar for power transistor performance. As GaN technology matures, not only does the performance of these transistors rapidly improve, but significant reductions in cost are also realized. Not only will GaN devices continue to enable new applications, they will replace silicon power transistors in cost-sensitive applications as well. As a matter of fact, the first signs of this happening are already here.

Power Systems Design
By: Johan Strydom, Ph.D.
September 26, 2015
Read Article