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EPC Receives 2018 Top 10 Power Products Award from Electronic Products China Magazine-21iC Media

EPC Receives  2018 Top 10 Power Products Award from  Electronic Products China Magazine-21iC Media

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.

EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.

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Spirit Tech Talk with EPC

Spirit Tech Talk with EPC

Spirit's Marti McCurdy and EPC's CEO Alex Lidow discuss the performance and cost benefits of gallium nitride over silicon and how leading companies the world over work with EPC to develop their next gen technologies with the power of GaN.

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APEC2018: EPC Professional Education GaN Seminar

APEC2018: EPC Professional Education GaN Seminar

Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.

Planet Analog
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EPC is leading the world to a new age of wireless power

EPC is leading the world to a new age of wireless power

Nextbigfuture interviewed Alex Lidow, CEO of EPC. EPC is a leader in Gallium Nitride electronics and now is leading the charge to a new age of wireless power. In 5 to 10 years, we could begin to see entire houses or office buildings switching from costly wiring of buildings to a complete large area wireless solution.

NextBigFuture
September 9, 2017
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Reflections On APEC 2016: GaN’s Momentum, More Magnetics And An Inspiring Plenary

Reflections On APEC 2016: GaN’s Momentum, More Magnetics And An Inspiring Plenary

At this year’s APEC 2016, news about GaN power technology was probably more dominant than at any time in the past. Real product demos using GaN, new product and technology announcements, attention to GaN in the plenary, and other discussions all reinforced the impression that GaN power devices have arrived and the technology is making inroads in the marketplace. One of the tell-tale signs is a slight shift in the discussions, away from what the devices can do to what else is needed to support the design-in of GaN power transistors.

How2Power Today
David Morrison
April 1, 2016
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EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC will exhibit more than 20 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver six technical presentations on GaN FET technology at APEC® 2016, the premier global event in applied power electronics

EL SEGUNDO, Calif. — March, 2016 — The EPC team will be presenting six technical presentations on gallium nitride (GaN) technology and applications at APEC 2016 in Long Beach, California from March 20th through the 24th. In addition, the company will feature its latest eGaN® FETs and IC’s as well as their customers’ end products that are enabled by eGaN technology. Demonstrations will include wireless power systems that span the full power range of Qi and AirFuel standards and a multi-mode solution, a single stage 48 V – 1 V DC-DC converter, 3-D real-time LiDAR imaging camera, and an LTE compatible envelope tracking supply in booth #2244.

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Material Miracles

Material Miracles

Silicon, the stuff upon which the Valley was built, is maxing out. The future, according to some, belongs to gallium nitride. What is it, and what does it mean?

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Evolving eGaN FETs for power electronics

Evolving eGaN FETs for power electronics

The combination of lower on-resistance, faster switching speeds, lower thermal impedance, and smaller physical size of eGaN FETs continues to raise the bar for power transistor performance. As GaN technology matures, not only does the performance of these transistors rapidly improve, but significant reductions in cost are also realized. Not only will GaN devices continue to enable new applications, they will replace silicon power transistors in cost-sensitive applications as well. As a matter of fact, the first signs of this happening are already here.

Power Systems Design
By: Johan Strydom, Ph.D.
September 26, 2015
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