News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates.

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

Read more

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

Read more

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

Read more

Projected GaN Device Lifetime in Real World Applications Presented in EPC’s Phase 15 Report on GaN Reliability

Projected GaN Device Lifetime in Real World Applications Presented in EPC’s Phase 15 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-15 Reliability Report adding to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2023 — EPC announces the publication of its Phase-15 Reliability Report, documenting continued work using test-to-fail methodology and adding specific reliability metrics and predictions for real world applications including solar optimizers, lidar sensors, and DC-DC converters.

Read more

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

Read more

Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF™ Laser Driver IC

Efficient Power Conversion (EPC) introduces EPC21701, an 80 V laser driver IC capable of 15 A pulsed current for time-of-flight (ToF) lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing. 

EL SEGUNDO, Calif.— January 2023 — EPC announces the introduction of the EPC21701, a laser driver that monolithically integrates an 80 V, 40 A FET with gate driver and 3.3 logic level input into a single chip for time-of-flight lidar systems used in robotics, surveillance systems, and vacuum cleaners. It is tailored to lidar systems for gesture recognition, time of flight (ToF) measurement, robotic vision, or industrial safety.

Read more

GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
Read article

Read more

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

Read more

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with the addition of a fifth rad hard device to the product family.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, EPC7018, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

Read more

Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

Read more

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

Read more

Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

Read more

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

Read more

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

Read more

CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
Read article

Read more

EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

Read more

LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
Read article

Read more

The Next Wave of GaN and SiC

The Next Wave of GaN and SiC

Gallium nitride and silicon carbide are designated wide-bandgap (WBG) semiconductors based on the energy required to shift electrons in these materials from the valence to the conduction band — about 3.2 eV for SiC and 3.4 eV for GaN, compared with just 1.1 eV for silicon. The WBG properties lead to a higher applicable breakdown voltage, which can reach up to 1,700 V in some applications. At this year’s digital only PCIM Europe, held in May, several companies showed their latest innovations in GaN and SiC and offered insights on where WBG technology is headed.

EE Times – Europe
July, 2021
Read article

Read more
RSS
12345