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Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.
EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.
Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.
EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.
Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).
EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.
GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.
EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density. The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.
The 100 V EPC2218 GaN FETs alleviate space limitations to achieve higher frequency and power rating in BRC’s new M500/14 power optimizer
EL SEGUNDO, Calif.— August 2022. BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems. Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses.
The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.
Power Electronics News
The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.
EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.
EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters.
EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.
EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.
EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.