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EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.
EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.
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Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.
EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current. The EPC2221 can be used in lidar systems for robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.
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An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.
Power Systems Design
December, 2020
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Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2216, 15 V gallium nitride transistor optimized for affordable, high performance lidar systems.
EL SEGUNDO, Calif.— October 2019 — EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.
Power Systems Design
July, 2019
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Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of two new gallium nitride devices.
EL SEGUNDO, Calif.— January 2019 — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively.
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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.
EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.
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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.
EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
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