根据国家知识产权局官网20204年4月2日的消息，宜普电源转换公司（Efficient Power Conversion Corporation, EPC，以下简称宜普公司）一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序（案件编号：4W116775）中被维持有效。该件专利的无效请求人是英诺赛科（苏州）科技有限公司（以下简称英诺赛科公司）。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
Read article

Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).

EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.

The 100 V EPC2218 GaN FETs alleviate space limitations to achieve higher frequency and power rating in BRC’s new M500/14 power optimizer

EL SEGUNDO, Calif.— August 2022.  BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems. Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses.

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
Read article

GaN technology is developing rapidly with frequent releases of new generations of discrete devices that become the platform for new generations of more efficient, smaller, and lower cost integrated circuits. GaN integrated circuits make products smaller, faster, more efficient, and easier to design.

Power Systems Design
March, 2021 (page 36)
Read article

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

These new generation 100 V eGaN^® FETs are ideal for 48-V_OUT synchronous rectification, class-D audio, infotainment, and lidar.

EL SEGUNDO, Calif.— September, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs.  The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

These new generation 200 V eGaN^® FETs are ideal for 48 V_OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters

EL SEGUNDO, Calif.— August, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs.  The applications for these leading-edge devices include class D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The combination of Microchip Technology’s digital signal controllers with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 730 W/in³ for high efficiency, low cost DC-DC Conversion.

EL SEGUNDO, Calif.— July, 2020 — EPC announces the availability of the EPC9143, a 300 W DC-DC voltage regulator in 16^th brick size. The EPC9143 power module integrates Microchip’s dsPIC33CK digital signal controller (DSC) with the latest generation EPC2053 eGaN FETs from EPC to achieve 96% efficiency in a 48 V input to 12 V output conversion at 25 A.  The switching frequency of 500 kHz enables the 300 W in the very small 16^th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). Additional phases can be added to this scalable 2-phase design to further increase power. The flexibility of the Microchip digital controllers allows the input voltage to be adjusted from 8 V – 72 V and the output voltage from 3.3 V – 25 V.

A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
Read article

Ultra-fast transition eGaN^® FETs from Efficient Power Conversion (EPC) on the EPC9144 drive high current pulses up to 28 A with pulse widths as low as 1.2 ns, enhancing the accuracy, precision, and processing speed of ToF and flash lidar systems.

EL SEGUNDO, Calif.— January, 2020 — EPC announces the availability of the EPC9144, a 15 V, 28 A high current pulsed laser diode driver demonstration board.

Within the EPC hospitality suite at the Venetian hotel, world-changing innovations and gallium nitride (GaN) will go hand in hand. A variety of demonstrations will showcase GaN’s higher efficiency, smaller size, and lower cost solutions.

EL SEGUNDO, Calif. — December 2019 — Efficient Power Conversion (EPC) announced that it will be demonstrating the power of eGaN^® technology to enhance game-changing consumer applications including self-driving cars, robots, drones, wireless power, world-class audio and cutting-edge automotive solutions – at the 2020 Consumer Electronics Show (CES) in Las Vegas, January 7^th through the 10^th.

In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2216, 15 V gallium nitride transistor optimized for affordable, high performance lidar systems.

EL SEGUNDO, Calif.— October 2019 — EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications including facial recognition, warehouse automation, drones and mapping.

Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems integration.

EL SEGUNDO, Calif.— June 2019 — EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration.  EPC’s eGaN^® FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps. 

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

EPC’s Phase Ten Reliability Report adds to the growing knowledge base published in the first nine reports. With this report, EPC has stress-tested over 30,000 parts for a total of over 18 million hours without failure.  There have been no field failures in over two years despite shipping millions of parts.

EL SEGUNDO, Calif.— February 2019 — EPC announces its Phase Ten Reliability Report, documenting the test results leading to the successful completion of automotive AEC-Q101 qualification. AEC-Q101 demands the highest level of reliability standards for power FETs, requiring not only zero datasheet failures, but also low parametric drift during stress testing.  Of note is that EPC’s WLCS packaging passed all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability.

As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific.

EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and capture new market opportunities.