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Meet with the EPC GaN Experts at APEC 2023 to See how the Latest Generation Power Semiconductors are Providing Best-in-Class Power Density Across Multiple Industries

Meet with the EPC GaN Experts at APEC 2023 to See how the Latest Generation Power Semiconductors are Providing Best-in-Class Power Density Across Multiple Industries

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — March 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations at the premier power electronics conference; the IEEE Applied Power Electronics Conference and Exposition (APEC 2023) in Orlando from March 19th through the 23rd (see detailed schedule below).  In addition, the company will demonstrate it’s latest generation of eGaN® FETs and ICs in applications ranging from high-power density computing, eMobility, robotics, solar power, battery charging, and more in booth # 732 in the Orange County Convention Center.  Stop by to see the ‘Wall of GaN’ – the broadest portfolio of GaN power semiconductors in the market available for off-the-shelf delivery.

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EPC Presents Sixth eGaN Generation

EPC Presents Sixth eGaN Generation

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET for Advanced Autonomy from EPC

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

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Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs

EL SEGUNDO, Calif.—  January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications.  The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.

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GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

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Podcast: electronica 2022 preview

Podcast:  electronica 2022 preview

From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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Premium Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs from EPC

Premium Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs from EPC

The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— February, 2022 — EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN® FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version:

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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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GaN Devices for Smaller, Lighter, Smoother Motor Drives

GaN Devices for Smaller, Lighter, Smoother Motor Drives

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) announces the expansion of its new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, gaming, and autonomous cars.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.

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GaN in Space Applications

GaN in Space Applications

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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GaN eases Silicon out

GaN eases Silicon out

Just like life’s reality, when the aged leaves the center stage for the younger ones, Silicon is taking the bow. The advent and adoption of Gallium Nitride (GaN) have succeeded in gradually easing out the old reliable Silicon. For over four decades, power management efficiency and cost have improved steadily as innovations in power MOSFET structures, technology, and circuit topologies have kept pace with the growing need for electrical power. In the new millennium, however, the rate of improvement has slowed dramatically as the silicon power MOSFET approaches its theoretical bounds. At the same time, the new material, GaN is steadily progressing on its journey toward a theoretical performance boundary that is 6,000 times better than the aging silicon MOSFET and 300 times better than the best GaN products on the market today.

EEWeb
July 16, 2020
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Class D audio, Gallium-Nitride versus Silicon – Virtual Roundtable (part 2 of 2)

Class D audio, Gallium-Nitride versus Silicon – Virtual Roundtable (part 2 of 2)

In this second part of EEWorld’s “virtual roundtable” discussion on Class D audio, our panelists delve into the impact that the emergence of gallium-nitride (GaN) is having on Class D designs: Where are silicon devices still dominant? What are the performance benefits of using GaN in Class D amplifiers? And what are the anticipated future trends of GaN versus Silicon in Class D amplifiers? Joining us for this virtual roundtable are Joshua LeMaire (JL), Audio Systems Architect at Analog Devices; Steve Colino (SC), Vice President Strategic Technical Sales with Efficient Power Conversion; and Jens Tybo Jensen (JTJ), Head of Application Engineering for Class D Audio at Infineon Technologies.

EEWorld Online
July, 2020
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Silicon Is Dead…and Discrete Power Devices Are Dying

Silicon Is Dead…and Discrete Power Devices Are Dying

For over four decades, power management efficiency and cost have improved steadily as innovations in power MOSFET structures, technology, and circuit topologies have kept pace with the growing need for electrical power. In the new millennium, however, the rate of improvement has slowed dramatically as the silicon power MOSFET approaches its theoretical bounds. At the same time, a new material, gallium nitride (GaN) is steadily progressing on its journey toward a theoretical performance boundary that is 6,000 times better than the aging silicon MOSFET and 300 times better than the best GaN products on the market today.

EETimes
June, 2020
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GaN Transistor for Several Power Applications

GaN Transistor for Several Power Applications

Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry where factors such as efficiency, power density, and smaller form factors are the main demands of the community. The power electronics industry has seen the theoretical limit of silicon MOSFETs reached and now needs to move to a new element. Gallium Nitride or GaN is a highly mobile semiconductor electron semiconductor (HEMT) that is proving to be a real added value in meeting new applications.

Power Electronics News
March 25, 2020
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EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

EPC and Spirit Electronics to Provide Data Packs for eGaN Power Devices

Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.

EL SEGUNDO, Calif.— June 2019 — EPC announces a partnership with Spirit Electronics to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices

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