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In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same RDS(on) as previous generation devices in die that are half the size.
A high power 1/16th brick converter using GaN FETs could increase maximum load current in these designs.
Enhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater
power densities than ever achievable before. eGaN devices also exhibit superior radiation tolerance compared with silicon MOSFETs.
Bodo’s Power Systems
Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems integration.
EL SEGUNDO, Calif.— June 2019 — EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration. EPC’s eGaN® FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps.
As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific.
EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and capture new market opportunities.