EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs

EL SEGUNDO, Calif.—  January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications.  The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Discrete power transistors, whether silicon-based or GaN-on-silicon, are entering their final chapter. GaN-on-Si integrated circuits offer higher performance in a smaller footprint with significantly reduced cost and less engineering required. This article details how the ascent of GaN is redefining power conversion.

Bodo’s Power Systems
October, 2020
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Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN^®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2019 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and transportation.

EL SEGUNDO, Calif.— April 2019 — The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2019 in Nuremberg, Germany from May 7^th through the 9th. In addition, in Hall 7, Stand 335, the company will exhibit its latest eGaN^® FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2214, 80 V gallium nitride transistor optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— April 2019 — EPC announces successful AEC Q101 qualification of the 80 V EPC2214 designed for lidar systems in the automotive industry and other harsh environments. 

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package.  In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz

EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum R_DS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm² footprint.

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

Within the EPC hospitality suite, wirelessly powered systems for the home and GaN based, industry-leading LiDAR systems used in autonomous vehicles will be on display.

EL SEGUNDO, Calif. — December 2018 — Efficient Power Conversion (EPC) will be demonstrating the power of eGaN^® technology to enhance two game-changing consumer applications – wireless power and LiDAR for self-driving cars – at the 2018 Consumer Electronics Show (CES) in Las Vegas, January 8^th through the 11^th.