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A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low RDS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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GaN Power Behind Mild Hybrid Vehicle Electrification

GaN Power Behind Mild Hybrid Vehicle Electrification

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

The EPC9170 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— January 2022 — EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN® IC plus EPC2302 eGaN® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

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