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Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

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200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility

Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

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Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution

EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs

EL SEGUNDO, Calif.—  January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications.  The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.

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Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

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