Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
Watch Video

In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same R_DS(on) as previous generation devices in die that are half the size.

How2Power
November, 2022
Read article