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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide.

“It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Efficient Power Conversion Corporation (EPC) Expands Industry-Leading Family of Enhancement Mode Gallium Nitride (eGaN) FETs with Second Generation 200 Volt, 100 milliohm Power Transistor

EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

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