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Model Behavior to Determine GaN Performance

Model  Behavior to Determine GaN Performance

Users of GaN FETs and ICs now have a tool to determine the derating needed in an application and reduce voltage derating factors. EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides demonstrations for two synchronous rectification application examples.

Electronic Specifier
May, 2022
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Bodo’s Wide Bandgap Expert Talk - GaN Session - June 2021

Bodo’s Wide Bandgap Expert Talk - GaN Session - June 2021

A roundtable discussion with GaN industry experts hosted by Bodo’s Power Systems. Guests included:

  1. Alex Lidow, CEO and co-founder of Efficient Power Conversion
  2. Doug Bailey, Vice President Marketing & Applications Engineering at Power Integrations
  3. Dilder Chowdhury, Director, Strategic Marketing, Power GaN Technology at Nexperia
  4. Tom Ribarich, Sr. Director Strategic Marketing at Navitas Semiconductor
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How To GaN: Enhancement Mode GaN Transistor Electrical Characteristics

For a power system designer who has worked with a power MOSFET, upgrading to an enhancement mode GaN transistor is straightforward. The basic operating characteristics are quite similar and yet there are a few characteristics that need to be considered in an efficient design in order to extract the maximum benefit from this new generation device. EEWeb By: Alex Lidow July, 2013 More ...

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Exploring gallium nitride technology

It has been three years since the commercialization of gallium nitride (GaN) devices as MOSFET replacements in a commercial DC-DC application. With the emergence of GaN devices, coupled with now attainable applications previously not achievable with MOSFET-based FETs, a favorable stage has been set for GaN-device developers to release emerging application potential largely unimagined and untapped.

EETimes Asia
May 16, 2013
http://www.eetasia.com/ART_8800684828_480200_TA_f13f883a.HTM

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eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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How2 Get the Most Out of GaN Power Transistors

Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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