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EPC Launches a New Generation of eGaN Technology that Doubles Performance

EPC Launches a New Generation of eGaN Technology that Doubles Performance

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

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Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

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Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications

Footprint Compatible Packaged GaN Family Expands to 150 V for Flexible Design of High-Power Density Applications

Efficient Power Conversion (EPC) introduces the 150 V, 6 mΩ EPC2308 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— October 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150 V EPC2308 designed for motor drive in power tools and robots, high density DC-DC from/to 80 V-100 V for industrial applications, synchronous rectification to 28 V – 54 V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.

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GaN ICs Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones

GaN ICs Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones

The EPC9176 GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— October, 2022 — EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower™ Stage GaN IC with embedded gate driver function and two GaN FETs with 5.2 mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20 V and 80 V and can deliver up to 28 Apk (20 ARMS). This voltage range and power level makes the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36 V – 80 V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots and factory automation.

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EPC Opens New Motor Drive Center of Excellence

EPC Opens New Motor Drive Center of Excellence

New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

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Expanded Family of Packaged GaN FETs Offers Footprint Compatible Solutions to Optimize Performance vs. Cost While Increasing Power Density and Improving Thermal Performance

Expanded Family of Packaged GaN FETs Offers Footprint Compatible Solutions to Optimize Performance vs. Cost While Increasing Power Density and Improving Thermal Performance

Efficient Power Conversion (EPC) introduces the 100 V, 3.8 mΩ EPC2306 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio.

EL SEGUNDO, Calif.— September 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio.

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BRC Solar Selects EPC 100 V eGaN FETs for Next Generation Solar Optimizer

BRC Solar Selects EPC 100 V eGaN FETs for Next Generation Solar Optimizer

The 100 V EPC2218 GaN FETs alleviate space limitations to achieve higher frequency and power rating in BRC’s new M500/14 power optimizer

EL SEGUNDO, Calif.— August 2022.  BRC Solar GmbH has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of pv plants and systems. Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses.

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35 A GaN ePower Stage IC Boosts Power Density and Simplifies Design

35 A GaN ePower Stage IC Boosts Power Density and Simplifies Design

Efficient Power Conversion (EPC) introduces the latest ePower™ Stage IC that integrates a complete GaN half-bridge power stage capable of up to 35 A at 1 MHz operation offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drives, and class-d audio amplifiers.

EL SEGUNDO, Calif.— August 2022 — EPC announces the introduction of a 100 V, 35 A integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.  

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Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with the addition of a fifth rad hard device to the product family.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, EPC7018, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100 V device that has the lowest on-resistance of any 100 V rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 APulsed, rad-hard GaN FET in a small 13.9 mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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‘GaN Talk Support Forum’ Launches to Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

‘GaN Talk Support Forum’ Launches to Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

Efficient Power Conversion (EPC) provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology.

EL SEGUNDO, Calif.—  June, 2022 — EPC announces the debut of a user community, the “GaN Talk Support Forum” as an environment for engineers to access product and design support and share ideas on the use of gallium nitride (GaN) based power technology. The forum was developed for engineers, engineering students, and all GaN enthusiasts and provides an opportunity for users to submit GaN-related questions and share ideas with the user community. Questions can be searched by topic category, top topics, or latest posts. Beyond submitting questions, users can share past questions and answers from within the forum via a ‘share’ link in the post.

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GaN ICs Shrink Motor Drives for eBikes and Drones

GaN ICs Shrink Motor Drives for eBikes and Drones

The EPC9173 GaN-based inverter reference design enhances motor system size, performance, range, precision, torque, all while simplifying design for faster time-to-market. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— June, 2022 — EPC announces the availability of the EPC9173, a 3-phase BLDC motor drive inverter using the EPC23101 eGaN® IC with embedded gate driver function and a floating power GaN FET with 3.3 mΩ RDS(on). The EPC9173 operates from an input supply voltage between 20 V and 85 V and can deliver up to 50 Apk (35 ARMS). This voltage range and power level makes the solution ideal for a variety of motor drive applications including e-bikes, scooters, city cars, drones, and robotics.

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The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

The Smallest 40 V, 1.1 mΩ FET in the World from EPC Enables State-of-the-Art Power Density

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

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Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

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The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

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Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Ultra-Low On-Resistance Rad Hard 200 V Transistor Now Available for Demanding Space Applications from EPC

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 APulsed, rad-hard GaN FET in a small 5.76 mm2 footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

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Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.

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New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

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EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

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Benchmark Power Density Achieved Using “All-GaN” Design for Universal Input USB PD3.1 Ultra-Fast Charger Reference Design Delivering 240 W

Benchmark Power Density Achieved Using “All-GaN” Design for Universal Input USB PD3.1 Ultra-Fast Charger Reference Design Delivering 240 W

The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current. 

EL SEGUNDO, Calif.— March, 2022 — EPC announces the availability of the EPC9171, a 90 V – 260 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48 V output voltage and 5 A load

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