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EPC Confirms Continued Supply of Leading-Edge Gallium Nitride Power Devices

EPC Confirms Continued Supply of Leading-Edge Gallium Nitride Power Devices

On July 3rd, 2023, China’s Ministry of Commerce announced it would put in place certain restrictions on the exporting of gallium and germanium, among other materials, starting in August of this year. EPC’s wafer technology is ‘GaN-on-Si’, although the amount of gallium in each device is miniscule. There are significant sources of gallium available worldwide and EPC’s needs are relatively small, we expect no short or long-term interruption of supply.

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EPC Presents Sixth eGaN Generation

EPC Presents Sixth eGaN Generation

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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Podcast: GaN Devices for Space Applications

Podcast: GaN Devices for Space Applications

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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EPC Opens GaN-based Motor Drive Design Application Center in Italy

EPC Opens GaN-based Motor Drive Design Application Center in Italy

The development of gallium nitride technology has ushered in a new age for power electronics. The greater bandgap, critical field, and electron mobility are the three factors that affect GaN technology the most. To concentrate on expanding motor drive applications based on GaN technology in the e-mobility, robotics, drone, and industrial automation areas, EPC has opened a new design application center close to Turin, Italy.

EE Times Europe
September, 2022
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GaN Application Base Widens, Adoption Grows

GaN Application Base Widens, Adoption Grows

Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.

Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.

Semiconductor Engineering
December, 2021
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Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc-dc converters, ac-dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal-oxide-semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let's look at three key risk factors: supply chain risk, cost risk, and reliability risk.

IEEE Spectrum
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Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Senior representatives GaN power manufacturers (EPC, Transphorm, GaN Systems, Infineon and Navitas) presented details of their significant developments in moving the technology into mainstream, volume applications. Based on the information presented in the five talks, there are three significant reasons to expect dramatic growth in adoption of GaN power devices.

Bodo’s Power Systems
June 1, 2016
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Yole: Power To Dominate GaN-On-Silicon Market

Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements.

http://powerelectronicsworld.net/article/0/79693-yole-power-to-dominate-gan-on-silicon-market.html

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EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC) http://www.digikey.com/us/en/press-release/epc-gan-global-distribution-agreement.html

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GaN Power Devices Transition To Production Phase

Since gallium nitride (GaN) based power devices have a vast potential to grow in usage, this market opportunity continues to attract more new suppliers. As a result, the list of manufacturers of GaN technology based power devices is steadily expanding. How2Power June, 2013 More ...

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Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN
March 15, 2013

As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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