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EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion

EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion

EPC GaN FETs leverage drivers and controllers by Analog Devices to simplify GaN design, increase efficiency, reduce cooling cost, and help enable the highest power density for computing, industrial, and consumer DC/DC converters.

EL SEGUNDO, Calif.— January, 2024— EPC announces the availability of several reference designs that feature EPC GaN FETs and Analog Devices, Inc. (ADI) controllers.

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Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller

Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller

EPC and Analog Devices introduce a reference design using a new Analog controller fully optimized to drive EPC GaN FETs and achieving greater than 96.5% efficiency.

EL SEGUNDO, Calif.— July, 2022 — EPC announces the availability of the EPC9158, a dual output synchronous buck converter reference design board operating at 500 kHz switching frequency that converts an input voltage of 48 V - 54 V to a regulated 12 V output and delivers up to 25 A per phase or 50 A total continuous current. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient GaN FETs from EPC enables a highly efficient solution in a small footprint for high power density applications. The solution achieves 96.5% efficient at 48 V to 12 V and 50 A continuous current.

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Podcast: electronica 2022 preview

Podcast:  electronica 2022 preview

From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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EPC Opens New Motor Drive Center of Excellence

EPC Opens New Motor Drive Center of Excellence

New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

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Podcast: How is GaN Powering Wireless Charging Advances?

Podcast: How is GaN Powering Wireless Charging Advances?

Join host Dr. Sanjay Gupta and guest Alex Lidow, CEO of Efficient Power Conversion – or EPC – in episode 5 as they explore the ways GaN is advancing the future of wireless charging. As wireless power increases in maturity and adoption, the industry needs solutions that improve performance, efficiency, and user experience. Gallium Nitride is essential to enabling higher power applications than can be achieved with traditional silicon, opening the door for charging multiple devices and more diverse devices, such as laptops, drones, robots, power tools, eBikes, and industrial equipment. Wireless charging circuits employing GaN transistors are also five to ten times smaller than silicon devices able to handle the same power levels.

AirFuel Alliance
May, 2022
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Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

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